Non-volatile resistive switching mechanism in single-layer MoS(2) memristors: insights from ab initio modelling of Au and MoS(2) interfaces

Non-volatile memristive devices based on two-dimensional (2D) layered materials provide an attractive alternative to conventional flash memory chips. Single-layer semiconductors, such as monolayer molybdenum disulphide (ML-MoS(2)), enable the aggressive downscaling of devices towards greater system...

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Detalles Bibliográficos
Autores principales: Boschetto, Gabriele, Carapezzi, Stefania, Todri-Sanial, Aida
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10408618/
https://www.ncbi.nlm.nih.gov/pubmed/37560426
http://dx.doi.org/10.1039/d3na00045a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10408618/
https://www.ncbi.nlm.nih.gov/pubmed/37560426
http://dx.doi.org/10.1039/d3na00045a

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