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Non-volatile resistive switching mechanism in single-layer MoS(2) memristors: insights from ab initio modelling of Au and MoS(2) interfaces

Non-volatile memristive devices based on two-dimensional (2D) layered materials provide an attractive alternative to conventional flash memory chips. Single-layer semiconductors, such as monolayer molybdenum disulphide (ML-MoS(2)), enable the aggressive downscaling of devices towards greater system...

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Detalles Bibliográficos
Autores principales:	Boschetto, Gabriele, Carapezzi, Stefania, Todri-Sanial, Aida
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	RSC 2023
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10408618/ https://www.ncbi.nlm.nih.gov/pubmed/37560426 http://dx.doi.org/10.1039/d3na00045a

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