A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current

In this paper, a nanoscale dopingless bidirectional RFET (BRFET) is proposed. Unlike conventional BRFETs, the proposed BRFET uses two different metal materials to form two different types of Schottky barriers on the interface between the S/D and silicon. For one of the two metal forms, the Schottky...

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Detalles Bibliográficos
Autores principales: Jin, Xiaoshi, Zhang, Shouqiang, Zhao, Chunrong, Li, Meng, Liu, Xi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409688/
https://www.ncbi.nlm.nih.gov/pubmed/37382762
http://dx.doi.org/10.1186/s11671-023-03835-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409688/
https://www.ncbi.nlm.nih.gov/pubmed/37382762
http://dx.doi.org/10.1186/s11671-023-03835-3

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