Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires

GaAsBi nanowires represent a novel and promising material platform for future nano-photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a challenge due to a large miscibility gap between GaAs and GaBi. In this work we investigate effects of Bi incorporation on la...

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Detalles Bibliográficos
Autores principales: Jansson, M., Nosenko, V. V., Rudko, G. Yu, Ishikawa, F., Chen, W. M., Buyanova, I. A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409742/
https://www.ncbi.nlm.nih.gov/pubmed/37553456
http://dx.doi.org/10.1038/s41598-023-40217-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409742/
https://www.ncbi.nlm.nih.gov/pubmed/37553456
http://dx.doi.org/10.1038/s41598-023-40217-2

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