Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy

The droplet epitaxy of indium gallium nitride quantum dots (InGaN QDs), the formation of In–Ga alloy droplets in ultra-high vacuum and then surface nitridation by plasma treatment, is firstly investigated by using plasma-assisted molecular beam epitaxy. During the droplet epitaxy process, in-situ re...

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Detalles Bibliográficos
Autores principales: Nurzal, Nurzal, Hsu, Ting-Yu, Susanto, Iwan, Yu, Ing-Song
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409935/
https://www.ncbi.nlm.nih.gov/pubmed/37382746
http://dx.doi.org/10.1186/s11671-023-03844-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409935/
https://www.ncbi.nlm.nih.gov/pubmed/37382746
http://dx.doi.org/10.1186/s11671-023-03844-2

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