Cargando…

Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy

The droplet epitaxy of indium gallium nitride quantum dots (InGaN QDs), the formation of In–Ga alloy droplets in ultra-high vacuum and then surface nitridation by plasma treatment, is firstly investigated by using plasma-assisted molecular beam epitaxy. During the droplet epitaxy process, in-situ re...

Descripción completa

Detalles Bibliográficos
Autores principales:	Nurzal, Nurzal, Hsu, Ting-Yu, Susanto, Iwan, Yu, Ing-Song
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2023
Materias:	Research
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10409935/ https://www.ncbi.nlm.nih.gov/pubmed/37382746 http://dx.doi.org/10.1186/s11671-023-03844-2

Ejemplares similares

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
por: Yu, Ing-Song, et al.
Publicado: (2014)

High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
por: Bietti, Sergio, et al.
Publicado: (2020)

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy
por: Zhang, Xue, et al.
Publicado: (2022)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates
por: Tuktamyshev, Artur, et al.
Publicado: (2019)

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy
por: Gu, Ying, et al.
Publicado: (2023)

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
por: Liu, Guangyu, et al.
Publicado: (2011)

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
por: Zhong, Aihua, et al.
Publicado: (2012)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots
por: Gajjela, Raja S. R., et al.
Publicado: (2021)

Formation of Ga droplets on patterned GaAs (100) by molecular beam epitaxy
por: Li, Ming-Yu, et al.
Publicado: (2012)

Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
por: Wang, Chiu-Yen, et al.
Publicado: (2017)

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
por: Bolshakov, Alexey D, et al.
Publicado: (2018)

AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy
por: Zhang, Dongqi, et al.
Publicado: (2022)

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
por: Liu, Shuangtao, et al.
Publicado: (2019)

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
por: Makhloufi, Hajer, et al.
Publicado: (2014)

Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots
por: Li, Xiaohui, et al.
Publicado: (2023)

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy
por: Davydok, Anton, et al.
Publicado: (2012)

Self-organization of quantum-dot pairs by high-temperature droplet epitaxy
por: Wang, Zhiming M, et al.
Publicado: (2006)

Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures
por: Kim, Sung-Un, et al.
Publicado: (2020)

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
por: Ma, Dingyu, et al.
Publicado: (2017)

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B
por: Davydok, Anton, et al.
Publicado: (2013)

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)
por: Volkov, Roman, et al.
Publicado: (2021)

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
por: Benyoucef, Mohamed, et al.
Publicado: (2012)

Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface
por: Lin, Cho-Ying, et al.
Publicado: (2019)

Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates
por: Lee, JH, et al.
Publicado: (2009)

Defect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots
por: Hu, Fengrui, et al.
Publicado: (2015)

Modeling of Al and Ga Droplet Nucleation during Droplet Epitaxy or Droplet Etching
por: Heyn, Christian, et al.
Publicado: (2021)

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS(2) Layer
por: Susanto, Iwan, et al.
Publicado: (2021)

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
por: Dey, Arka B., et al.
Publicado: (2018)

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
por: Tamura, Yosuke, et al.
Publicado: (2015)

Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111)
por: Abe, Shunsuke, et al.
Publicado: (2010)

Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
por: Linares-García, Gabriel, et al.
Publicado: (2016)

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates
por: Abbarchi, Marco, et al.
Publicado: (2020)

Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy
por: Abbarchi, Marco, et al.
Publicado: (2021)

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy
por: Henini, M
Publicado: (2006)

Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al(0.3)Ga(0.7)As Quantum Dots Grown by Droplet Epitaxy
por: Yeo, Inah, et al.
Publicado: (2020)

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography
por: Ilahi, Bouraoui, et al.
Publicado: (2016)

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
por: Wang, Tao, et al.
Publicado: (2018)

Post-thermal-Induced Recrystallization in GaAs/Al(0.3)Ga(0.7)As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry
por: Yeo, Inah, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_qed8cpodajpl2c97sfcsvrs693