Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications

For the CH(3)NH(3)PbI(3)-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their low energy barrier. Herein, a polyacrylonitrile (PAN) passivat...

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Detalles Bibliográficos
Autores principales: Zhang, Xiaohan, Zhao, Xiaoning, Wang, Zhongqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421001/
https://www.ncbi.nlm.nih.gov/pubmed/37570491
http://dx.doi.org/10.3390/nano13152174

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421001/
https://www.ncbi.nlm.nih.gov/pubmed/37570491
http://dx.doi.org/10.3390/nano13152174

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