Cargando…
Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications
For the CH(3)NH(3)PbI(3)-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their low energy barrier. Herein, a polyacrylonitrile (PAN) passivat...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421001/ https://www.ncbi.nlm.nih.gov/pubmed/37570491 http://dx.doi.org/10.3390/nano13152174 |