Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation

Silicon carbide (SiC) is a promising material for thermoelectric power generation. The characterization of thermal transport properties is essential to understanding their applications in thermoelectric devices. The existence of stacking faults, which originate from the “wrong” stacking sequences of...

Descripción completa

Detalles Bibliográficos
Autores principales: Yin, Kaili, Shi, Liping, Ma, Xiaoliang, Zhong, Yesheng, Li, Mingwei, He, Xiaodong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421163/
https://www.ncbi.nlm.nih.gov/pubmed/37570514
http://dx.doi.org/10.3390/nano13152196

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421163/
https://www.ncbi.nlm.nih.gov/pubmed/37570514
http://dx.doi.org/10.3390/nano13152196

Ejemplares similares