Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-...

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Detalles Bibliográficos
Autores principales: Park, Won, Park, Jun-Hyeong, Eun, Jun-Su, Lee, Jinuk, Na, Jeong-Hyeon, Lee, Sin-Hyung, Jang, Jaewon, Kang, In Man, Kim, Do-Kyung, Bae, Jin-Hyuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421181/
https://www.ncbi.nlm.nih.gov/pubmed/37570549
http://dx.doi.org/10.3390/nano13152231

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421181/
https://www.ncbi.nlm.nih.gov/pubmed/37570549
http://dx.doi.org/10.3390/nano13152231

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