Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO(X):SiO(2) Thin Films on Resistive Random Access Memory Devices

Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITO(X):SiO(2) thin film resistive random access memory (RRAM) devices were observed and discussed. The ITO(X):SiO(2) thin films were prepared using a co-sputtering deposition method on the...

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Detalles Bibliográficos
Autores principales: Chen, Kai-Huang, Cheng, Chien-Min, Wang, Na-Fu, Kao, Ming-Cheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421286/
https://www.ncbi.nlm.nih.gov/pubmed/37570498
http://dx.doi.org/10.3390/nano13152179

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10421286/
https://www.ncbi.nlm.nih.gov/pubmed/37570498
http://dx.doi.org/10.3390/nano13152179

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