Exploring the Interpad Gap Region in Ultra-Fast Silicon Detectors: Insights into Isolation Structure and Electric Field Effects on Charge Multiplication

We present an in-depth investigation of the interpad (IP) gap region in the ultra-fast silicon detector (UFSD) Type 10, utilizing a femtosecond laser beam and the transient current technique (TCT) as probing instruments. The sensor, fabricated in the trench-isolated TI-LGAD RD50 production batch at...

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Detalles Bibliográficos
Autores principales: Laštovička-Medin, Gordana, Rebarz, Mateusz, Doknic, Jovana, Bozovic, Ivona, Kramberger, Gregor, Laštovička, Tomáš, Andreasson, Jakob
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10422380/
https://www.ncbi.nlm.nih.gov/pubmed/37571529
http://dx.doi.org/10.3390/s23156746

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10422380/
https://www.ncbi.nlm.nih.gov/pubmed/37571529
http://dx.doi.org/10.3390/s23156746

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