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Exploring the Interpad Gap Region in Ultra-Fast Silicon Detectors: Insights into Isolation Structure and Electric Field Effects on Charge Multiplication

We present an in-depth investigation of the interpad (IP) gap region in the ultra-fast silicon detector (UFSD) Type 10, utilizing a femtosecond laser beam and the transient current technique (TCT) as probing instruments. The sensor, fabricated in the trench-isolated TI-LGAD RD50 production batch at...

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Detalles Bibliográficos
Autores principales:	Laštovička-Medin, Gordana, Rebarz, Mateusz, Doknic, Jovana, Bozovic, Ivona, Kramberger, Gregor, Laštovička, Tomáš, Andreasson, Jakob
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10422380/ https://www.ncbi.nlm.nih.gov/pubmed/37571529 http://dx.doi.org/10.3390/s23156746

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