Opening the Bandgap of Metallic Half‐Heuslers via the Introduction of d–d Orbital Interactions

Half‐Heusler compounds with semiconducting behavior have been developed as high‐performance thermoelectric materials for power generation. Many half‐Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half‐Heusler MgN...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Airan, Brod, Madison K., Wang, Yuechu, Hu, Kejun, Nan, Pengfei, Han, Shen, Gao, Ziheng, Zhao, Xinbing, Ge, Binghui, Fu, Chenguang, Anand, Shashwat, Snyder, G. Jeffrey, Zhu, Tiejun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10427359/
https://www.ncbi.nlm.nih.gov/pubmed/37271926
http://dx.doi.org/10.1002/advs.202302086

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10427359/
https://www.ncbi.nlm.nih.gov/pubmed/37271926
http://dx.doi.org/10.1002/advs.202302086

Ejemplares similares