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Opening the Bandgap of Metallic Half‐Heuslers via the Introduction of d–d Orbital Interactions
Half‐Heusler compounds with semiconducting behavior have been developed as high‐performance thermoelectric materials for power generation. Many half‐Heusler compounds also exhibit metallic behavior without a bandgap and thus inferior thermoelectric performance. Here, taking metallic half‐Heusler MgN...
Autores principales: | Li, Airan, Brod, Madison K., Wang, Yuechu, Hu, Kejun, Nan, Pengfei, Han, Shen, Gao, Ziheng, Zhao, Xinbing, Ge, Binghui, Fu, Chenguang, Anand, Shashwat, Snyder, G. Jeffrey, Zhu, Tiejun |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10427359/ https://www.ncbi.nlm.nih.gov/pubmed/37271926 http://dx.doi.org/10.1002/advs.202302086 |
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