Low energy Si(+), SiCH(5)(+), or C(+) beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in silicon carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when the source gas for CVD was dimethylsilane (DMS). Thus, we tried to change carbon-inclusion levels in the film b...

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Detalles Bibliográficos
Autores principales: Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10432993/
https://www.ncbi.nlm.nih.gov/pubmed/37600370
http://dx.doi.org/10.1016/j.heliyon.2023.e19002

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10432993/
https://www.ncbi.nlm.nih.gov/pubmed/37600370
http://dx.doi.org/10.1016/j.heliyon.2023.e19002

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