Cargando…
Low energy Si(+), SiCH(5)(+), or C(+) beam injections to silicon substrates during chemical vapor deposition with dimethylsilane
We found that the atomic-concentration-ratio of carbon to silicon (C/Si ratio) in silicon carbide (SiC) films formed by thermal chemical vapor deposition (CVD) was much greater than 1 when the source gas for CVD was dimethylsilane (DMS). Thus, we tried to change carbon-inclusion levels in the film b...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Elsevier
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10432993/ https://www.ncbi.nlm.nih.gov/pubmed/37600370 http://dx.doi.org/10.1016/j.heliyon.2023.e19002 |