Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy

This work investigates the function of the oxygen partial pressure in photo-induced current measurement of extended defect properties related to the distribution and quantity of defect states in electronic structures. The Fermi level was adjusted by applying a negative gate bias in the TFT structure...

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Detalles Bibliográficos
Autores principales: Hong, Hyunmin, Kim, Min Jung, Yi, Dong-Joon, Moon, Yeon-Keon, Son, Kyoung-Seok, Lim, Jun Hyung, Jeong, KwangSik, Chung, Kwun-Bum
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10435584/
https://www.ncbi.nlm.nih.gov/pubmed/37591958
http://dx.doi.org/10.1038/s41598-023-40162-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10435584/
https://www.ncbi.nlm.nih.gov/pubmed/37591958
http://dx.doi.org/10.1038/s41598-023-40162-0

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