Cargando…

Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy

This work investigates the function of the oxygen partial pressure in photo-induced current measurement of extended defect properties related to the distribution and quantity of defect states in electronic structures. The Fermi level was adjusted by applying a negative gate bias in the TFT structure...

Descripción completa

Detalles Bibliográficos
Autores principales:	Hong, Hyunmin, Kim, Min Jung, Yi, Dong-Joon, Moon, Yeon-Keon, Son, Kyoung-Seok, Lim, Jun Hyung, Jeong, KwangSik, Chung, Kwun-Bum
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10435584/ https://www.ncbi.nlm.nih.gov/pubmed/37591958 http://dx.doi.org/10.1038/s41598-023-40162-0

Ejemplares similares

Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors
por: Choi, Woo Sik, et al.
Publicado: (2022)

Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films
por: Joo, Hyo-Jun, et al.
Publicado: (2020)

Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors
por: Lee, Sungsik, et al.
Publicado: (2016)

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits
por: Martins, Jorge, et al.
Publicado: (2017)

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
por: Wang, Dapeng, et al.
Publicado: (2019)

Effects of NH(3) Plasma and Mg Doping on InGaZnO pH Sensing Membrane
por: Kao, Chyuan-Haur, et al.
Publicado: (2021)

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors
por: Wang, Yunping, et al.
Publicado: (2022)

Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid
por: Kim, Yoon-Seo, et al.
Publicado: (2022)

Integration of microbattery with thin-film electronics for constructing an integrated transparent microsystem based on InGaZnO
por: Jia, Bin, et al.
Publicado: (2023)

Optimizing the Properties of InGaZnO(x) Thin Film Transistors by Adjusting the Adsorbed Degree of Cs(+) Ions
por: Zhang, He, et al.
Publicado: (2019)

Visible-light-stimulated synaptic InGaZnO phototransistors enabled by wavelength-tunable perovskite quantum dots
por: Xin, Zhilong, et al.
Publicado: (2021)

Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection
por: Fan, Zenghui, et al.
Publicado: (2022)

Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
por: Zhou, Yan, et al.
Publicado: (2018)

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors
por: Ning, Honglong, et al.
Publicado: (2017)

Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers
por: Zhang, Ying, et al.
Publicado: (2019)

Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
por: Lei, Liuhui, et al.
Publicado: (2021)

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses
por: Wang, Dapeng, et al.
Publicado: (2018)

Effect of Oxygen Content on Current Stress-Induced Instability in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
por: Choi, Sungju, et al.
Publicado: (2019)

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles
por: Naqi, Muhammad, et al.
Publicado: (2021)

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns
por: Yan, Xingzhen, et al.
Publicado: (2022)

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO(x) Passivation Layers
por: Zhang, Wen, et al.
Publicado: (2021)

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature
por: Wang, Chunlan, et al.
Publicado: (2022)

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination
por: Huang, Xiaoming, et al.
Publicado: (2023)

Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion
por: Park, So Hee, et al.
Publicado: (2023)

Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors
por: Oh, Changyong, et al.
Publicado: (2023)

Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility
por: Lin, Hung-Cheng, et al.
Publicado: (2015)

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses
por: Wang, Dapeng, et al.
Publicado: (2018)

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
por: Liu, Yiming, et al.
Publicado: (2021)

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors
por: Hong, Sae-Young, et al.
Publicado: (2019)

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
por: Kim, Donguk, et al.
Publicado: (2022)

Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness
por: Kim, Ye Kyun, et al.
Publicado: (2016)

High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al(2)O(3) Dielectric
por: Shao, Yan, et al.
Publicado: (2019)

Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O(2) mixed-plasma surface treatment
por: Cho, Seong-Kun, et al.
Publicado: (2020)

Analysis of Threshold Voltage Shift for Full V(GS)/V(DS)/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
por: Kim, Je-Hyuk, et al.
Publicado: (2021)

Investigation of Photophysical Properties of Ternary Zn–Ga–S Quantum Dots: Band Gap versus Sub-Band-Gap Excitations and Emissions
por: Yadav, Amar Nath, et al.
Publicado: (2019)

Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center
por: Faul, J, et al.
Publicado: (1993)

Transient Radiation Imaging Based on a ZnO:Ga Single-Crystal Image Converter
por: Xu, Mengxuan, et al.
Publicado: (2018)

Site changes of ion-implanted Li in GaAs below 300 K
por: Lindner, G, et al.
Publicado: (1989)

Photo-oscillations in MgZnO/ZnO heterostructures
por: Iñarrea, Jesús
Publicado: (2022)

Conductive Photo-Activated Porphyrin-ZnO Nanostructured Gas Sensor Array
por: Magna, Gabriele, et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_l9ioaomhcf4s340shuqd261dqo