Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells

[Image: see text] The internal quantum efficiency of (In,Ga)N/GaN quantum wells can surpass 90% for blue-emitting structures at moderate drive current densities but decreases significantly for longer emission wavelengths and at higher excitation rates. This latter effect is known as efficiency “droo...

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Detalles Bibliográficos
Autores principales: Barrett, R. M., McMahon, J. M., Ahumada-Lazo, R., Alanis, J. A., Parkinson, P., Schulz, S., Kappers, M. J., Oliver, R. A., Binks, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10436346/
https://www.ncbi.nlm.nih.gov/pubmed/37602288
http://dx.doi.org/10.1021/acsphotonics.3c00355

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10436346/
https://www.ncbi.nlm.nih.gov/pubmed/37602288
http://dx.doi.org/10.1021/acsphotonics.3c00355

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