High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage

Tailoring the interfacial interaction in SiC-based anode materials is crucial to the accomplishment of higher energy capacities and longer cycle lives for lithium-ion storage. In this paper, atomic-scale tunable interfacial interaction is achieved by epitaxial growth of high-quality N doped graphene...

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Detalles Bibliográficos
Autores principales: Sun, Changlong, Xu, Xin, Gui, Cenlin, Chen, Fuzhou, Wang, Yian, Chen, Shengzhou, Shao, Minhua, Wang, Jiahai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10439101/
https://www.ncbi.nlm.nih.gov/pubmed/37596510
http://dx.doi.org/10.1007/s40820-023-01175-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10439101/
https://www.ncbi.nlm.nih.gov/pubmed/37596510
http://dx.doi.org/10.1007/s40820-023-01175-6

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