Annealing-induced phase transformation in In(10)Se(70)Te(20) thin films and its structural, optical and morphological changes for optoelectronic applications

In(2)Se(3) and In(2)Te(3) have great importance in various device fabrications. The present report is based on the annealing-induced phase formation of both In(2)Se(3) and In(2)Te(3) from In(10)Se(70)Te(20) thin films at different annealing temperatures as found from the XRD analysis and well suppor...

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Detalles Bibliográficos
Autores principales: Giri, Sasmita, Priyadarshini, P., Alagarasan, D., Ganesan, R., Naik, R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10442775/
https://www.ncbi.nlm.nih.gov/pubmed/37614788
http://dx.doi.org/10.1039/d3ra03731b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10442775/
https://www.ncbi.nlm.nih.gov/pubmed/37614788
http://dx.doi.org/10.1039/d3ra03731b

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