Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry

[Image: see text] The high thermal conductivity of polycrystalline diamond makes it ideally suited for thermal management solutions for gallium nitride (GaN) devices, with a diamond layer grown on an aluminum nitride (AlN) interlayer atop the GaN stack. However, this application is limited by the th...

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Detalles Bibliográficos
Autores principales: Leigh, William, Mandal, Soumen, Cuenca, Jerome A., Wallis, David, Hinz, Alexander M., Oliver, Rachel A., Thomas, Evan L. H., Williams, Oliver
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10448653/
https://www.ncbi.nlm.nih.gov/pubmed/37636904
http://dx.doi.org/10.1021/acsomega.3c03609

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10448653/
https://www.ncbi.nlm.nih.gov/pubmed/37636904
http://dx.doi.org/10.1021/acsomega.3c03609

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