Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD

[Image: see text] Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the re...

Descripción completa

Detalles Bibliográficos
Autores principales: Parkhomenko, Irina, Vlasukova, Liudmila, Komarov, Fadei, Kovalchuk, Nataliya, Demidovich, Sergey, Zhussupbekova, Ainur, Zhussupbekov, Kuanysh, Shvets, Igor V., Milchanin, Oleg, Zhigulin, Dmitry, Romanov, Ivan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10448691/
https://www.ncbi.nlm.nih.gov/pubmed/37636914
http://dx.doi.org/10.1021/acsomega.3c04997

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10448691/
https://www.ncbi.nlm.nih.gov/pubmed/37636914
http://dx.doi.org/10.1021/acsomega.3c04997

Ejemplares similares