Cargando…
Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD
[Image: see text] Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the re...
Autores principales: | , , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10448691/ https://www.ncbi.nlm.nih.gov/pubmed/37636914 http://dx.doi.org/10.1021/acsomega.3c04997 |
_version_ | 1785094791149649920 |
---|---|
author | Parkhomenko, Irina Vlasukova, Liudmila Komarov, Fadei Kovalchuk, Nataliya Demidovich, Sergey Zhussupbekova, Ainur Zhussupbekov, Kuanysh Shvets, Igor V. Milchanin, Oleg Zhigulin, Dmitry Romanov, Ivan |
author_facet | Parkhomenko, Irina Vlasukova, Liudmila Komarov, Fadei Kovalchuk, Nataliya Demidovich, Sergey Zhussupbekova, Ainur Zhussupbekov, Kuanysh Shvets, Igor V. Milchanin, Oleg Zhigulin, Dmitry Romanov, Ivan |
author_sort | Parkhomenko, Irina |
collection | PubMed |
description | [Image: see text] Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH(4)/N(2) = 1.875 and SiH(4)/N(2)O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH(4)/N(2)/N(2)O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiO(x) and SiN(x) films. Nanocrystalline phases of Si as well as α- and β-Si(3)N(4) were found in the annealed silicon nitride film. Compared to oxide and nitride films, the oxynitride film is the least susceptible to change during annealing. The relationship between the structure, composition, and optical properties of the Si-based films has been revealed. It has been shown that the calculated optical parameters (refractive index, extinction coefficient) reflect structural peculiarities of the as-deposited and annealed films. |
format | Online Article Text |
id | pubmed-10448691 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-104486912023-08-25 Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD Parkhomenko, Irina Vlasukova, Liudmila Komarov, Fadei Kovalchuk, Nataliya Demidovich, Sergey Zhussupbekova, Ainur Zhussupbekov, Kuanysh Shvets, Igor V. Milchanin, Oleg Zhigulin, Dmitry Romanov, Ivan ACS Omega [Image: see text] Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH(4)/N(2) = 1.875 and SiH(4)/N(2)O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH(4)/N(2)/N(2)O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiO(x) and SiN(x) films. Nanocrystalline phases of Si as well as α- and β-Si(3)N(4) were found in the annealed silicon nitride film. Compared to oxide and nitride films, the oxynitride film is the least susceptible to change during annealing. The relationship between the structure, composition, and optical properties of the Si-based films has been revealed. It has been shown that the calculated optical parameters (refractive index, extinction coefficient) reflect structural peculiarities of the as-deposited and annealed films. American Chemical Society 2023-08-08 /pmc/articles/PMC10448691/ /pubmed/37636914 http://dx.doi.org/10.1021/acsomega.3c04997 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Parkhomenko, Irina Vlasukova, Liudmila Komarov, Fadei Kovalchuk, Nataliya Demidovich, Sergey Zhussupbekova, Ainur Zhussupbekov, Kuanysh Shvets, Igor V. Milchanin, Oleg Zhigulin, Dmitry Romanov, Ivan Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD |
title | Effect of Rapid
Thermal Annealing on Si-Based Dielectric
Films Grown by ICP-CVD |
title_full | Effect of Rapid
Thermal Annealing on Si-Based Dielectric
Films Grown by ICP-CVD |
title_fullStr | Effect of Rapid
Thermal Annealing on Si-Based Dielectric
Films Grown by ICP-CVD |
title_full_unstemmed | Effect of Rapid
Thermal Annealing on Si-Based Dielectric
Films Grown by ICP-CVD |
title_short | Effect of Rapid
Thermal Annealing on Si-Based Dielectric
Films Grown by ICP-CVD |
title_sort | effect of rapid
thermal annealing on si-based dielectric
films grown by icp-cvd |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10448691/ https://www.ncbi.nlm.nih.gov/pubmed/37636914 http://dx.doi.org/10.1021/acsomega.3c04997 |
work_keys_str_mv | AT parkhomenkoirina effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT vlasukovaliudmila effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT komarovfadei effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT kovalchuknataliya effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT demidovichsergey effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT zhussupbekovaainur effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT zhussupbekovkuanysh effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT shvetsigorv effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT milchaninoleg effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT zhigulindmitry effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd AT romanovivan effectofrapidthermalannealingonsibaseddielectricfilmsgrownbyicpcvd |