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Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions

Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl(4)), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are s...

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Detalles Bibliográficos
Autores principales: Matkivskyi, Vladyslav, Leiviskä, Oskari, Wenner, Sigurd, Liu, Hanchen, Vähänissi, Ville, Savin, Hele, Di Sabatino, Marisa, Tranell, Gabriella
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456286/
https://www.ncbi.nlm.nih.gov/pubmed/37629812
http://dx.doi.org/10.3390/ma16165522