Analysis of the Thermally Induced Packaging Effects on the Frequency Drift of Micro-Electromechanical System Resonant Accelerometer

Due to the working principle of MEMS resonant accelerometers, their thermally induced frequency drift is an inevitable practical issue for their extensive application. This paper is focused on reducing the thermally induced packaging effects on the frequency drift. A leadless ceramic chip carrier package with a stress-buffering layer was proposed for a MEMS resonant accelerometer, and the influences of packaging structure parameters on the frequency drift were investigated through finite element simulations and verified experimentally. Because of the thermal mismatch between dissimilar materials, the thermo-mechanical stress within the resonant beam leads to a change in the effective stiffness and causes the frequency drift to decrease linearly with increasing temperature. Furthermore, our investigations reveal that increasing the stress-buffering layer thickness and reducing the solder layer thickness can significantly minimize the thermo-mechanical stress within the resonant beam. As the neutral plane approaches the horizontal symmetry plane of the resonant beam when optimizing the packaging structure, the effects of the compressive and tensile stresses on the effective stiffness of the resonant beam will cancel each other out, which can dramatically reduce the frequency drift. These findings provide guidelines for packaging design through which to improve the temperature stability of MEMS resonant accelerometers.