Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD) characteristics of these devices. Experimenta...

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Detalles Bibliográficos
Autores principales: Tyaginov, Stanislav, O’Sullivan, Barry, Chasin, Adrian, Rawal, Yaksh, Chiarella, Thomas, de Carvalho Cavalcante, Camila Toledo, Kimura, Yosuke, Vandemaele, Michiel, Ritzenthaler, Romain, Mitard, Jerome, Palayam, Senthil Vadakupudhu, Reifsnider, Jason, Kaczer, Ben
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456430/
https://www.ncbi.nlm.nih.gov/pubmed/37630050
http://dx.doi.org/10.3390/mi14081514

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456430/
https://www.ncbi.nlm.nih.gov/pubmed/37630050
http://dx.doi.org/10.3390/mi14081514

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