An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices

In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs). To build this new model, the dynamic on-resistance (R(dson)) is first accurately extracted via our extraction circuit based on a double-di...

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Detalles Bibliográficos
Autores principales: Lei, Jianming, Liu, Yangyi, Yang, Zhanmin, Chen, Yalin, Chen, Dunjun, Xu, Liang, Yu, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456439/
https://www.ncbi.nlm.nih.gov/pubmed/37630169
http://dx.doi.org/10.3390/mi14081633

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456439/
https://www.ncbi.nlm.nih.gov/pubmed/37630169
http://dx.doi.org/10.3390/mi14081633

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