Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress

In today’s digital circuits, Si-based MOS devices have become the most widely used technology in medical, military, aerospace, and aviation due to their advantages of mature technology, high performance, and low cost. With the continuous integration of transistors, the characteristic size of MOSFETs...

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Detalles Bibliográficos
Autores principales: Gao, Tianzhi, Yang, Jianye, Liu, Hongxia, Lu, Yong, Liu, Changjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456529/
https://www.ncbi.nlm.nih.gov/pubmed/37630040
http://dx.doi.org/10.3390/mi14081504

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456529/
https://www.ncbi.nlm.nih.gov/pubmed/37630040
http://dx.doi.org/10.3390/mi14081504

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