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Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress
In today’s digital circuits, Si-based MOS devices have become the most widely used technology in medical, military, aerospace, and aviation due to their advantages of mature technology, high performance, and low cost. With the continuous integration of transistors, the characteristic size of MOSFETs...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456529/ https://www.ncbi.nlm.nih.gov/pubmed/37630040 http://dx.doi.org/10.3390/mi14081504 |