Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications

In this study, AlGaN/GaN nanochannel high-electron-mobility transistors (HEMTs) with tri-gate (TGN-devices) and dual-gate (DGN-devices) structures were fabricated and investigated. It was found that the peak value of the transconductance (G(m)), current gain cut-off frequency (f(T)) and power gain c...

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Detalles Bibliográficos
Autores principales: Zhang, Meng, Chen, Yilin, Guo, Siyin, Lu, Hao, Zhu, Qing, Mi, Minhan, Wu, Mei, Hou, Bin, Yang, Ling, Ma, Xiaohua, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456697/
https://www.ncbi.nlm.nih.gov/pubmed/37630049
http://dx.doi.org/10.3390/mi14081513

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456697/
https://www.ncbi.nlm.nih.gov/pubmed/37630049
http://dx.doi.org/10.3390/mi14081513

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