Formation of Paramagnetic Defects in the Synthesis of Silicon Carbide

Silicon carbide (SiC) is a very promising platform for quantum information processing, as it can host room temperature solid state defect quantum bits. These room temperature quantum bits are realized by paramagnetic silicon vacancy and divacancy defects in SiC that are typically introduced by irrad...

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Detalles Bibliográficos
Autores principales: Mukesh, Nain, Márkus, Bence G., Jegenyes, Nikoletta, Bortel, Gábor, Bezerra, Sarah M., Simon, Ferenc, Beke, David, Gali, Adam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456762/
https://www.ncbi.nlm.nih.gov/pubmed/37630053
http://dx.doi.org/10.3390/mi14081517

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456762/
https://www.ncbi.nlm.nih.gov/pubmed/37630053
http://dx.doi.org/10.3390/mi14081517

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