Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high...

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Detalles Bibliográficos
Autores principales: Liu, An-Chen, Tu, Po-Tsung, Chen, Hsin-Chu, Lai, Yung-Yu, Yeh, Po-Chun, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456779/
https://www.ncbi.nlm.nih.gov/pubmed/37630118
http://dx.doi.org/10.3390/mi14081582

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456779/
https://www.ncbi.nlm.nih.gov/pubmed/37630118
http://dx.doi.org/10.3390/mi14081582

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