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Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high...

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Autores principales: Liu, An-Chen, Tu, Po-Tsung, Chen, Hsin-Chu, Lai, Yung-Yu, Yeh, Po-Chun, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456779/
https://www.ncbi.nlm.nih.gov/pubmed/37630118
http://dx.doi.org/10.3390/mi14081582
_version_ 1785096781291323392
author Liu, An-Chen
Tu, Po-Tsung
Chen, Hsin-Chu
Lai, Yung-Yu
Yeh, Po-Chun
Kuo, Hao-Chung
author_facet Liu, An-Chen
Tu, Po-Tsung
Chen, Hsin-Chu
Lai, Yung-Yu
Yeh, Po-Chun
Kuo, Hao-Chung
author_sort Liu, An-Chen
collection PubMed
description A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high performance, obtaining low-damage techniques in gate recess processing has so far proven too challenging. In this letter, we demonstrate a high current density and high breakdown down voltage of a MIS-HEMT with a recessed gate by the low damage gate recessed etching of atomic layer etching (ALE) technology. After the remaining 3.7 nm of the AlGaN recessed gate was formed, the surface roughness (Ra of 0.40 nm) was almost the same as the surface without ALE (no etching) as measured by atomic force microscopy (AFM). Furthermore, the devices demonstrate state-of-the-art characteristics with a competitive maximum drain current of 608 mA/mm at a V(G) of 6 V and a threshold voltage of +2.0 V. The devices also show an on/off current ratio of 10(9) and an off-state hard breakdown voltage of 1190 V. The low damage of ALE technology was introduced into the MIS-HEMT with the recessed gate, which effectively reduced trapping states at the interface to obtain the low on-resistance (R(on)) of 6.8 Ω·mm and high breakdown voltage performance.
format Online
Article
Text
id pubmed-10456779
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-104567792023-08-26 Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications Liu, An-Chen Tu, Po-Tsung Chen, Hsin-Chu Lai, Yung-Yu Yeh, Po-Chun Kuo, Hao-Chung Micromachines (Basel) Article A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high performance, obtaining low-damage techniques in gate recess processing has so far proven too challenging. In this letter, we demonstrate a high current density and high breakdown down voltage of a MIS-HEMT with a recessed gate by the low damage gate recessed etching of atomic layer etching (ALE) technology. After the remaining 3.7 nm of the AlGaN recessed gate was formed, the surface roughness (Ra of 0.40 nm) was almost the same as the surface without ALE (no etching) as measured by atomic force microscopy (AFM). Furthermore, the devices demonstrate state-of-the-art characteristics with a competitive maximum drain current of 608 mA/mm at a V(G) of 6 V and a threshold voltage of +2.0 V. The devices also show an on/off current ratio of 10(9) and an off-state hard breakdown voltage of 1190 V. The low damage of ALE technology was introduced into the MIS-HEMT with the recessed gate, which effectively reduced trapping states at the interface to obtain the low on-resistance (R(on)) of 6.8 Ω·mm and high breakdown voltage performance. MDPI 2023-08-11 /pmc/articles/PMC10456779/ /pubmed/37630118 http://dx.doi.org/10.3390/mi14081582 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Liu, An-Chen
Tu, Po-Tsung
Chen, Hsin-Chu
Lai, Yung-Yu
Yeh, Po-Chun
Kuo, Hao-Chung
Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
title Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
title_full Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
title_fullStr Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
title_full_unstemmed Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
title_short Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
title_sort improving performance and breakdown voltage in normally-off gan recessed gate mis-hemts using atomic layer etching and gate field plate for high-power device applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456779/
https://www.ncbi.nlm.nih.gov/pubmed/37630118
http://dx.doi.org/10.3390/mi14081582
work_keys_str_mv AT liuanchen improvingperformanceandbreakdownvoltageinnormallyoffganrecessedgatemishemtsusingatomiclayeretchingandgatefieldplateforhighpowerdeviceapplications
AT tupotsung improvingperformanceandbreakdownvoltageinnormallyoffganrecessedgatemishemtsusingatomiclayeretchingandgatefieldplateforhighpowerdeviceapplications
AT chenhsinchu improvingperformanceandbreakdownvoltageinnormallyoffganrecessedgatemishemtsusingatomiclayeretchingandgatefieldplateforhighpowerdeviceapplications
AT laiyungyu improvingperformanceandbreakdownvoltageinnormallyoffganrecessedgatemishemtsusingatomiclayeretchingandgatefieldplateforhighpowerdeviceapplications
AT yehpochun improvingperformanceandbreakdownvoltageinnormallyoffganrecessedgatemishemtsusingatomiclayeretchingandgatefieldplateforhighpowerdeviceapplications
AT kuohaochung improvingperformanceandbreakdownvoltageinnormallyoffganrecessedgatemishemtsusingatomiclayeretchingandgatefieldplateforhighpowerdeviceapplications