Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application

The high-quality n-type CdS on a p-type Si (111) photodetector device was prepared for the first time by a one-pot method based on an ns laser ablation method in a liquid medium. Cadmium target was ablated in DMSO solution, containing sulfur precursor, and stirred, assisting in 1D-growth, to create...

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Detalles Bibliográficos
Autores principales: Alkallas, Fatemah H., Alghamdi, Shoug M., Al-Ahmadi, Ameenah N., Trabelsi, Amira Ben Gouider, Mwafy, Eman A., Elsharkawy, W. B., Alsubhe, Emaan, Mostafa, Ayman M., Rezk, Reham A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456857/
https://www.ncbi.nlm.nih.gov/pubmed/37630081
http://dx.doi.org/10.3390/mi14081546

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456857/
https://www.ncbi.nlm.nih.gov/pubmed/37630081
http://dx.doi.org/10.3390/mi14081546

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