Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect

In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that,...

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Detalles Bibliográficos
Autores principales: Yin, Chenyu, Gao, Tianzhi, Wei, Hao, Chen, Yaolin, Liu, Hongxia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456903/
https://www.ncbi.nlm.nih.gov/pubmed/37630156
http://dx.doi.org/10.3390/mi14081620

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456903/
https://www.ncbi.nlm.nih.gov/pubmed/37630156
http://dx.doi.org/10.3390/mi14081620

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