Cargando…
Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect
In this paper, the single event effect of 6T-SRAM is simulated at circuit level and device level based on a 22 nm fully depleted silicon-on-insulator (FDSOI) process, and the effects of charge sharing and bipolar amplification are considered in device-level simulation. The results demonstrate that,...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456903/ https://www.ncbi.nlm.nih.gov/pubmed/37630156 http://dx.doi.org/10.3390/mi14081620 |