Subthreshold Conduction of Disordered ZnO-Based Thin-Film Transistors

This study presents the disorderedness effects on the subthreshold characteristics of atomically deposited ZnO thin-film transistors (TFTs). Bottom-gate ZnO TFTs show n-type enhancement-mode transfer characteristics but a gate-voltage-dependent, degradable subthreshold swing. The charge-transport ch...

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Detalles Bibliográficos
Autor principal: Yoon, Minho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456918/
https://www.ncbi.nlm.nih.gov/pubmed/37630132
http://dx.doi.org/10.3390/mi14081596

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456918/
https://www.ncbi.nlm.nih.gov/pubmed/37630132
http://dx.doi.org/10.3390/mi14081596

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