Metal-Induced Trap States: The Roles of Interface and Border Traps in HfO(2)/InGaAs

By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO(2) and at the HfO(2)/InGaAs interfaces are studied. The oxidation at Ti/HfO(2) is found to create th...

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Detalles Bibliográficos
Autores principales: Do, Huy-Binh, Luc, Quang-Ho, Pham, Phuong V., Phan-Gia, Anh-Vu, Nguyen, Thanh-Son, Le, Hoang-Minh, De Souza, Maria Merlyne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456933/
https://www.ncbi.nlm.nih.gov/pubmed/37630142
http://dx.doi.org/10.3390/mi14081606

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456933/
https://www.ncbi.nlm.nih.gov/pubmed/37630142
http://dx.doi.org/10.3390/mi14081606

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