A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices

We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin currents generated through the spin Hall effect. We sca...

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Detalles Bibliográficos
Autores principales: Hadámek, Tomáš, Jørstad, Nils Petter, de Orio, Roberto Lacerda, Goes, Wolfgang, Selberherr, Siegfried, Sverdlov, Viktor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456936/
https://www.ncbi.nlm.nih.gov/pubmed/37630117
http://dx.doi.org/10.3390/mi14081581

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456936/
https://www.ncbi.nlm.nih.gov/pubmed/37630117
http://dx.doi.org/10.3390/mi14081581

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