Cargando…
A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin currents generated through the spin Hall effect. We sca...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456936/ https://www.ncbi.nlm.nih.gov/pubmed/37630117 http://dx.doi.org/10.3390/mi14081581 |