Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO(2) Thin Films

Oxygen defects in Hafnium Oxide (HfO(2))-based ferroelectric thin films not only are related to the cause of ferroelectricity but also affect the ferroelectric properties of the thin films. This paper, therefore, focuses on the fabrication of Zr:HfO(2) thin films by RF (Radio Frequency) magnetron sp...

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Detalles Bibliográficos
Autores principales: Xi, Yingxue, Liu, Lei, Zhao, Jiwu, Qin, Xinhui, Zhang, Jin, Zhang, Changming, Liu, Weiguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456957/
https://www.ncbi.nlm.nih.gov/pubmed/37629850
http://dx.doi.org/10.3390/ma16165559

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456957/
https://www.ncbi.nlm.nih.gov/pubmed/37629850
http://dx.doi.org/10.3390/ma16165559

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