Precision Grinding Technology of Silicon Carbide (SiC) Ceramics by Longitudinal Torsional Ultrasonic Vibrations

Silicon carbide (SiC) ceramic material has become the most promising third-generation semiconductor material for its excellent mechanical properties at room temperature and high temperature. However, SiC ceramic machining has serious tool wear, low machining efficiency, poor machining quality and ot...

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Detalles Bibliográficos
Autores principales: Ye, Zejiu, Wen, Xu, Wan, Weiqiang, Liu, Fuchu, Bai, Wei, Xu, Chao, Chen, Hui, Gong, Pan, Han, Guangchao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456965/
https://www.ncbi.nlm.nih.gov/pubmed/37629863
http://dx.doi.org/10.3390/ma16165572

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10456965/
https://www.ncbi.nlm.nih.gov/pubmed/37629863
http://dx.doi.org/10.3390/ma16165572

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