A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication. This process is composed of a self-limited surface modification step with O(2) plasma, following by an oxide removal...

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Detalles Bibliográficos
Autores principales: Wang, Luyu, Zhang, Penghao, Zhu, Kaiyue, Wang, Qiang, Pan, Maolin, Sun, Xin, Huang, Ziqiang, Chen, Kun, Yang, Yannan, Xie, Xinling, Huang, Hai, Hu, Xin, Xu, Saisheng, Wu, Chunlei, Wang, Chen, Xu, Min, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10458019/
https://www.ncbi.nlm.nih.gov/pubmed/37630860
http://dx.doi.org/10.3390/nano13162275

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10458019/
https://www.ncbi.nlm.nih.gov/pubmed/37630860
http://dx.doi.org/10.3390/nano13162275

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