Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures

Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application o...

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Detalles Bibliográficos
Autores principales: Ghosh, Sujoy, Zhang, Jie, Wasala, Milinda, Patil, Prasanna, Pradhan, Nihar, Talapatra, Saikat
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10459643/
https://www.ncbi.nlm.nih.gov/pubmed/37630917
http://dx.doi.org/10.3390/nano13162333

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10459643/
https://www.ncbi.nlm.nih.gov/pubmed/37630917
http://dx.doi.org/10.3390/nano13162333

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