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Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures
Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application o...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10459643/ https://www.ncbi.nlm.nih.gov/pubmed/37630917 http://dx.doi.org/10.3390/nano13162333 |
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author | Ghosh, Sujoy Zhang, Jie Wasala, Milinda Patil, Prasanna Pradhan, Nihar Talapatra, Saikat |
author_facet | Ghosh, Sujoy Zhang, Jie Wasala, Milinda Patil, Prasanna Pradhan, Nihar Talapatra, Saikat |
author_sort | Ghosh, Sujoy |
collection | PubMed |
description | Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS(2) FETs, synthesized using the mechanical exfoliation of bulk MoS(2) crystal, on the Si/SiO(2) substrate. Our MoS(2) FET show a room-temperature field-effect mobility μ(FE) ~40 cm(2)·V(−1)·s(−1), which increases with decreasing temperature, stabilizing at 80 cm(2)·V(−1)·s(−1) below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P(eff) (0.02 μW < P(eff) < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW(−1), and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS(2) at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications. |
format | Online Article Text |
id | pubmed-10459643 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-104596432023-08-27 Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures Ghosh, Sujoy Zhang, Jie Wasala, Milinda Patil, Prasanna Pradhan, Nihar Talapatra, Saikat Nanomaterials (Basel) Article Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS(2) FETs, synthesized using the mechanical exfoliation of bulk MoS(2) crystal, on the Si/SiO(2) substrate. Our MoS(2) FET show a room-temperature field-effect mobility μ(FE) ~40 cm(2)·V(−1)·s(−1), which increases with decreasing temperature, stabilizing at 80 cm(2)·V(−1)·s(−1) below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P(eff) (0.02 μW < P(eff) < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW(−1), and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS(2) at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications. MDPI 2023-08-14 /pmc/articles/PMC10459643/ /pubmed/37630917 http://dx.doi.org/10.3390/nano13162333 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Ghosh, Sujoy Zhang, Jie Wasala, Milinda Patil, Prasanna Pradhan, Nihar Talapatra, Saikat Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures |
title | Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures |
title_full | Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures |
title_fullStr | Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures |
title_full_unstemmed | Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures |
title_short | Probing the Electronic and Opto-Electronic Properties of Multilayer MoS(2) Field-Effect Transistors at Low Temperatures |
title_sort | probing the electronic and opto-electronic properties of multilayer mos(2) field-effect transistors at low temperatures |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10459643/ https://www.ncbi.nlm.nih.gov/pubmed/37630917 http://dx.doi.org/10.3390/nano13162333 |
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