Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors

The scaling of transistors with thinner channel thicknesses has led to a surge in research on two-dimensional (2D) and quasi-2D semiconductors. However, modulating the threshold voltage (V(T)) in ultrathin transistors is challenging, as traditional doping methods are not readily applicable. In this...

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Detalles Bibliográficos
Autores principales: Tseng, Robert, Wang, Sung-Tsun, Ahmed, Tanveer, Pan, Yi-Yu, Chen, Shih-Chieh, Shih, Che-Chi, Tsai, Wu-Wei, Chen, Hai-Ching, Kei, Chi-Chung, Chou, Tsung-Te, Hung, Wen-Ching, Chen, Jyh-Chen, Kuo, Yi-Hou, Lin, Chun-Liang, Woon, Wei-Yen, Liao, Szuya Sandy, Lien, Der-Hsien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10462674/
https://www.ncbi.nlm.nih.gov/pubmed/37640725
http://dx.doi.org/10.1038/s41467-023-41041-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10462674/
https://www.ncbi.nlm.nih.gov/pubmed/37640725
http://dx.doi.org/10.1038/s41467-023-41041-y

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