Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

[Image: see text] This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative dev...

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Detalles Bibliográficos
Autores principales: Ghosh, Sayantan, Khan, Muhammad Bilal, Chava, Phanish, Watanabe, Kenji, Taniguchi, Takashi, Prucnal, Slawomir, Hübner, René, Mikolajick, Thomas, Erbe, Artur, Georgiev, Yordan M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10472425/
https://www.ncbi.nlm.nih.gov/pubmed/37606167
http://dx.doi.org/10.1021/acsami.3c04808

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10472425/
https://www.ncbi.nlm.nih.gov/pubmed/37606167
http://dx.doi.org/10.1021/acsami.3c04808

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