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Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization
[Image: see text] This work demonstrates the novel concept of a mixed-dimensional reconfigurable field effect transistor (RFET) by combining a one-dimensional (1D) channel material such as a silicon (Si) nanowire with a two-dimensional (2D) material as a gate dielectric. An RFET is an innovative dev...
Autores principales: | Ghosh, Sayantan, Khan, Muhammad Bilal, Chava, Phanish, Watanabe, Kenji, Taniguchi, Takashi, Prucnal, Slawomir, Hübner, René, Mikolajick, Thomas, Erbe, Artur, Georgiev, Yordan M. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10472425/ https://www.ncbi.nlm.nih.gov/pubmed/37606167 http://dx.doi.org/10.1021/acsami.3c04808 |
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